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Journal of Renewable and Sustainable Energy / Volume 4 / Issue 1 / SPECIAL TOPIC: SELECTED PAPERS FROM THE PHOTOVOLTAIC TECHNICAL CONFERENCE, AIX EN PROVENCE, FRANCE, 2011

J. Renewable Sustainable Energy 4, 011602 (2012); http://dx.doi.org/10.1063/1.3676073 (12 pages)

Effect of indium doping on physical properties of nanocrystallized SnS zinc blend thin films grown by chemical bath deposition

Meriem Reghima1, Anis Akkari1,2, Cathy Guasch2, and Najoua Kamoun-Turki1

1Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis El Manar, Tunisie (2092), Tunisia
2Institut d’Electronique du Sud, Unité Mixte de Recherche 5214 UM2-CNRS, Université Montpellier 2, Place Eugène Bataillon Bat 21 cc083, F-34095 Montpellier Cedex 05, France

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(Received 23 July 2011; accepted 11 December 2011; published online 8 February 2012)

SnS:In thin films have been successfully prepared on Pyrex substrates using low cost chemical bath deposition technique with different indium concentrations (y = math = 4%,6%,8%,and10%). The structure, the surface morphology, and the optical properties of the SnS:In films were studied by x-ray diffraction, scanning electron microscope, atomic force microscopy, and spectrophotometer measurements. In order to obtain a thickness of the order of 308 ± 10 nm for potential applications in solar cell devices, a multilayer deposition has been prepared. It is found that the physical properties of tin sulphide are affected by indium concentration. In fact, x-ray diffraction study showed that better crystallinity in zinc blend structure with preferential orientations (111)ZB and (200)ZB was obtained for y equal to 6%. According to the AFM analysis, we remark that low average surface roughness value of SnS(ZB) thin film is obtained with In concentrations equal to y = 6%. Energy dispersive spectroscopy showed the existence of In, Sn, and S in the films. Optical analyses by means of transmission T(λ) and reflection R(λ) measurements show 1.57 eV as an optical band gap value of SnS:In(6%), which is lower than the previously obtained value (1.76 eV) for undoped tin sulphide. In doped tin sulphide exhibits a high absorption coefficient 2.5 × 106 cm−1, indicating that SnS:In can be used as absorber thin layer in photovoltaic structure such as SnS:In/ZnS/SnO2:F and SnS:In/In2S3/SnO2:F, where ZnS and In2S3 are chemically deposited as described in a previous work. In this study, the hetero-junctions SnS/In2S3:Al and SnS/ZnS:In are also investigated.

© 2012 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL DETAILS
    1. Substrate cleaning
    2. Reagents and preparation of solution
    3. The chemical solution
    4. Characterisation of SnS thin films
  3. RESULTS AND DISCUSSION
    1. Structural analysis
    2. Morphological analysis
    3. Optical analysis
  4. HETEROJUNCTION DESCRIPTION
    1. I(V) measurements
  5. CONCLUSION

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KEYWORDS, PACS, and IPC

Keywords

absorption coefficients, atomic force microscopy, doping, indium, liquid phase deposition, nanofabrication, nanostructured materials, scanning electron microscopy, spectrophotometers, surface morphology, surface roughness, thin films, X-ray diffraction

PACS

  • 81.07.Bc

    Nanocrystalline materials

  • 81.15.Lm

    Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

  • 61.72.up

    Other materials

  • 68.55.aj

    Insulators

  • 78.20.Ci

    Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

  • 78.67.Bf

    Nanocrystals, nanoparticles, and nanoclusters

International Patent Classification (IPC)

  • B05D1/00

    Processes for applying liquids or other fluent materials

  • B82B1/00

    Nano-structures

  • B82B3/00

    Manufacture or treatment of nano-structures

  • C23C18/00

    Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating

  • C30B31/00

    Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3676073

PUBLICATION DATA

ISSN

1941-7012 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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