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J. Renewable Sustainable Energy 4, 013110 (2012); http://dx.doi.org/10.1063/1.3683531 (10 pages)

ZnO based quantum dot sensitized solar cell using CdS quantum dots

Neetu Singh1, R. M. Mehra2, Avinashi Kapoor1, and T. Soga3

1Department of Electronic Science, University of Delhi South Campus, New Delhi 110021, India
2School of Engineering and Technology, Sharda University, Greater Noida 201306, Uttar Pradesh, India
3Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

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(Received 29 September 2011; accepted 14 January 2012; published online 8 February 2012)

This paper reports the fabrication of Zinc Oxide (ZnO) based quantum dot sensitized solar cell using Cadmium Sulphide (CdS) quantum dots (QDs) capped by poly vinyl alcohol (PVA). Chemical route was used to synthesize ZnO nanoparticles (NPs) as well as CdS QDs. The crystallite size of ZnO NPs was obtained to be 28 nm at 7 pH. The size of QDs decreased from 5.6 to 2.6 nm with increase in the PVA concentration from 2 to 10 wt. %. There is a blue shift in the band gap of QDs with increase in the concentration of PVA. Current-Voltage characteristic of the cell was obtained and various solar cell parameters were estimated. The efficiency of quantum dot sensitized solar cells was found to be 1.3% at AM 1.5.

© 2012 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL
    1. Synthesis of ZnO NPs
    2. Synthesis of CdS QDs
    3. Preparation of ZnO electrodes
    4. Preparation of gel electrolyte
    5. Fabrication of QDSSC
    6. Characterization and I-V measurement
  3. RESULT AND DISSCUSSION
    1. Analysis of ZnO NPs
    2. Analysis of CdS QDs
    3. I-V measurement
  4. CONCLUSION

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KEYWORDS, PACS, and IPC

PACS

  • 88.40.jm

    Thin film III-V and II-VI based solar cells

  • 88.40.hj

    Efficiency and performance of solar cells

International Patent Classification (IPC)

  • B82B1/00

    Nano-structures

  • B82B3/00

    Manufacture or treatment of nano-structures

  • H01L21/02

    Manufacture or treatment of semiconductor devices or of parts thereof

  • H01L21/70

    Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof

  • H01L27/142

    Energy conversion devices

  • H01L31/04

    Adapted as conversion devices

  • H02N6/00

    Generators in which light radiation is directly converted into electrical energy

ARTICLE DATA

PUBLICATION DATA

ISSN

1941-7012 (online)

For access to fully linked references, you need to log in.
    J. Lee, Y. Sung, T. G. Kim, and H. Choi, Appl. Phys. Lett. 91, 113104 (2007)APPLAB000091000011113104000001.

    S. Rani and R. M. Mehra, J. Renewable Sustainable Energy 1, 033109 (2009)JRSEBH000001000003033109000001.

    J. Chen, J. L. Song, X. W. Sun, W. Q. Deng, C. Y. Jiang, W. Lei, J. H. Huang, and R. S. Liu, Appl. Phys. Lett. 94, 153115 (2009)APPLAB000094000015153115000001.

    P. Nandakumar and C. Vijayan, J. Appl. Phys. 19, 1509 (2002)JAPIAU000091000003001509000001.


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